HSC226
HSC226 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low reverse current, Low capacitance.
- Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC226 Laser Mark S4 Package Code UFP
Outline
Cathode mark Mark 1
S4
2 1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Note: 10ms Sinewave 1pulse Symbol VRRM Value 25 200 50 125
- 55 to +125 Unit V m A m A °C °C
IFSM
- IF Tj Tstg
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance IR C Min
- -
- - Typ
- -
- - Max 0.33 0.38 0.45 2.80 µA p F Unit V Test Condition IF = 1 m A IF = 5 m A VR = 20 V VR = 1 V, f = 1 MHz
Rev.1, Aug. 2000, page 2 of 5
Main Characteristic
10 10
Forward current IF (A)
1 0
-4
Pulse test Ta=75°C
-2 -3
Ta=75°C Ta=25°C
10 10 10 10 10 10
Reverse current I R (A)
10 -1
-5
-4...
