HSK83
HSK83 is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features
- High reverse voltage. (VR=250V)
- LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No. HSK83 Cathode band White 2nd band Verdure Package Code LLD
Outline
Cathode band 1 2nd. band Cathode band 1 2nd. band 2 2
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Symbol VRM VR I FM I FSM IO Tj Tstg
- 1
Value 300 250 625 1 150 175 -65 to +175
Unit V V m A A m A °C °C
1. Value at duration of 1s.
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min
- -
- -
- Typ
- -
- 1.5
- Max 1.0 0.1 100
- 100 p F ns Unit V µA Test Condition I F = 100 m A VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 m A, Irr = 3m A, RL = 100Ω
Main Characteristic
-1 -5
Ta=75°C
(A)
Forward current I F
-2
Reverse current I R (A)
-6
Ta=50°C 10
-7
-3
Ta= 1 Ta= 25°C 7 Ta= 5°C 25°C...
