HSM276AS
HSM276AS is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- HSM276AS which is interconnected in series configuration is designed for balanced mixer use.
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM276AS Laser Mark S19 Package Code MPAK
Outline
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device Symbol VRRM VR IO
- Value 5 3 30 125 -55 to +125
Unit V V m A °C °C
Tj Tstg
Electrical Characteristics (Ta = 25°C)
- 2
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability
- 1
Symbol Min VR IR IF C ∆C
- 3.0
- 35
- - 30
Typ
- -
- -
- -
Max
- 50
- 0.90 0.10
- Unit V µA m A p F p F V
Test Condition I R = 1 m A VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200p F , R = 0 Ω Both forward and reverse direction 1pulse.
Notes : 1. Failure criterion ; IR ≥ 100 µA at V R =0.5 V 2. Per one device
Main Characteristic
-1
-2...
