HSM276S
HSM276S is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- HSM276S which is interconnected in series configuration is designed for balanced mixer use.
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM276S Laser Mark C2 Package Code MPAK
Outline
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125
- 55 to +125 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability
- 1
Symbol Min VR IR IF C ∆C
- 3.0
- 35
- - 30
Typ
- -
- -
- -
Max
- 50
- 0.90 0.10
- Unit V µA m A p F p F V
Test Condition I R = 1 m A VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200p F , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
Main Characteristic
-1 -2
Forward current I F (A)
-3
Reverse current I R...
