HSM276SR
HSM276SR is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM276SR Laser Mark C9 Package Code MPAK
Pin Arrangement
(Top View)
1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Per one device Symbol VR I O- Tj Tstg Value 3 30 125
- 55 to +125 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)- 1
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD Capability Symbol VR IR IF C ∆C
- Min 3.0
- 35
- - 30 Typ
- -
- -
- - Max
- 50
- 0.90 0.10
- Unit V µA m A p F p F V Test Condition I R = 1m A VR = 0.5V VF = 0.5V VR = 0.5V, f = 1MHz VR = 0.5V, f = 1MHz
- 2C = 200p F, Both forward and reverse direction 1 pulse
Notes: 1. Per one device 2. Failure Criterrion; IR ≥ 100µA at V R = 0.5V
- 1
Forward current I F (A)
- 2
- 3
- 4
-...
