• Part: HSM83
  • Description: Silicon Epitaxial Planar Diode for High Voltage Switching
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 26.71 KB
Download HSM83 Datasheet PDF
Hitachi Semiconductor
HSM83
HSM83 is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features - High reverse voltage. (VR = 250V) - MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM83 Laser Mark F7 Package Code MPAK Outline (Top View) 1 NC 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg - 1 Value 300 250 300 2 100 125 - 55 to +125 Unit V V m A A m A °C °C 1. Value at duration of 10msec. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min - - - - - Typ - - - 1.5 - Max 1.2 0.2 100 3.0 100 p F ns Unit V µA Test Condition I F = 100 m A VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR = 30 m A, Irr = 3m A, RL = 100Ω Main Characteristic -2 -5 10 10 (A) -3 -6 10 10 -4 -5 Reverse current I R (A) Forward current...