HSU119 Datasheet | Hitachi Semiconductor

Features - Low capacitance. (C = 2.0p F max) - Short reverse recovery time. (trr = 3.0ns max) - Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU119 Laser Mark H1 Package Code URP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRM VR IO I FM I FSM Tj Tstg - 1 Value 85 80 100 300 4 125 - 55 to +125 Unit V V m A m A A °C °C 1. Within 1µ s forward surge current. Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time- 1 Note: IR C t rr Min - - - - - Typ - - - - - Max 0.8 1.2 0.1 2.0 3.0 µA p F ns Unit V Test Condition I F = 10 m A I F = 100 m A VR = 80V VR = 0V, f = 1 MHz I F = 10 m A, VR = 6V RL= 50Ω 1. Reverse recovery time test circuit DC Supply 0.1µF 3k Ω Sampling Rin =50 Ω Oscilloscope Ro =50 Ω Pulse Generator Trigger Main Characteristic -4 10 10 Reverse current I R (A) -5 (A) Forward current...