HSU227
HSU227 is Silicon Schottky Barrier Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Low capacitance. (C=3.0p F max)
- Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HSU227 Laser Mark S3 Package Code URP
Outline
Cathode mark Mark 1
S3
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25 50
- 2
Unit V m A m A °C °C
IFSM
Tj
200 125 -55 to +125
Tstg
1. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Symbol VF IR C Min
- -
- Typ 0.29 0.3 2.45 Max 0.35 2.0 3.0 Unit V µA p F Test Condition I F = 1m A VR = 20V VR = 1V, 1=1MHz
Main Characteristic
1.0 Pulse test 10
Forward current IF (A)
-1
-4
Pulse test 10
-5
-2
10-3
Reverse current I R (A)
-6
10 -4
-5
10...
