HSU276
HSU276 is Silicon Schottky Barrier Diode for Mixer manufactured by Hitachi Semiconductor.
Features
- High forward current, Low capacitance.
- Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HSU276 Laser Mark 3 Package Code URP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125
- 55 to +125 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability Note:
- 1
Symbol VR IR IF C
- Min 3
- 35
- 30
Typ
- -
- -
- Max
- 50
- 0.85
- Unit V µA m A p F V
Test Condition I R = 1 m A VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz C = 200p F , Both forward and reverse direction 1 pulse.
1. Failure criterion ; IR ≥ 100µA at VR = 0.5 V
Main Characteristic
-2
-2
Reverse current I R (A)
Forward current...
