HVD355B
HVD355B is Variable Capacitance Diode manufactured by Hitachi Semiconductor.
Features
- High capacitance ratio. (n = 2.20 min)
- Low series resistance. (rs = 0.6 Ω max)
- Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD355B Laser Mark B Package Code SFP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125
- 55 to +125 Unit V °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min 6.40 2.55 2.20 Typ Max 10 100 7.20 2.95 0.6 Ω p F Unit n A Test Condition VR = 15V VR = 15 V, Ta = 60°C VR = 1 V, f = 1 MHz VR = 4V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
Note: Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Jun. 2000, page 2 of 5
Main Characteristic
10-6 10
(A)
-7
12 f=1MHz 10
Capacitance C (p F)
Reverse current IR
10 10 10 10
-8
-9
-10
Ta=75°C
-11
10 10
-12
Ta=25°C
-13...
