HVU187
HVU187 is Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator manufactured by Hitachi Semiconductor.
Features
- Low forward resistance. (rf=5.5 Ω max)
- Ultra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. HVU187 Laser Mark D Package Code URP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 -55 to +125 Unit V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
- 1
Symbol IR VF C rf
- Min
- -
- 3.5 200
Typ
- -
- -
- Max 100 1.0 2.4 5.5
- Unit n A V p F Ω V
Test Condition VR = 60V I F = 10 m A VR = 0V, f = 1 MHz I F = 10 m A, f = 100 MHz C=200p F , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR ≥ 100n A at VR = 60V
Main Characteristic
-3
10 -6 10-7 Reverse current I R (A)
-8
10 Forward current I F (A)
-5
-7
10 -9 10-10 10 -11 10 -12 10 -13...
