K1162
K1162 is Silicon N-Channel MOS FET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance
- High speed switching
- Low drive current
- No secondary breakdown
- Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G1
2 3 1. Gate 2. Drain (Flange)
S 3. Source
2SK1161, 2SK1162
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1161
2SK1162
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Symbol VDSS
VGSS ID I
- 1
D(pulse)
I DR Pch- 2 Tch Tstg
Ratings 450 500 ±30 10 30 10 100 150
- 55 to +150
Unit V
V A A A W °C °C
2SK1161, 2SK1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown...
