K1336 Datasheet | Hitachi Semiconductor

Features - Low on-resistance - High speed switching - Low drive current - 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I - 1 D(pulse) I DR Pch Tch Tstg Ratings 60 ±20 0.3 1.2 0.3 400 150 - 55 to +150 Unit V V A A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance - - 1.0 - - Forward transfer admittance |yfs| Input capacitance Ciss...