K168 Datasheet | Hitachi Semiconductor

2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 Free Datasheet http://..net/ 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSS IG ID Pch Tch Tstg Ratings - 30 - 1 10 20 200 150 - 55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 Symbol V(BR)GDO I GSS I DSS- Min - 30 - 4 - 8 - - - - Typ - - - - 10 6.8 0.1 27 1.7 Max - - 10 20 - 3.0 - - - - - Unit V n A m A V m S p F p F d B d B Test conditions I G = - 100 µA, IS = 0 VGS = - 0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 k Hz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 100 MHz VDS = 5 V, VGS = 0, f = 100 MHz VGS(off) |yfs| Ciss Crss PG NF 1. The 2SK168 is grouped by I DSS as follows. E 6 to 12 F 10 to 20 Free Datasheet http://..net/ 2SK168...