K2796 Datasheet | Hitachi Semiconductor

Features - Low on-resistance RDS(on) = 0.12Ω typ. - 4V gate drive devices. - High speed switching Outline DPAK |1 ADE-208-534C (Z) 4th. Edition Jun 1998 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Ratings 60 ±20 5 20 5 5 2.14 20 150 - 55 to +150 Unit V V A A A A m J W °C °C 2SK2796(L), 2SK2796(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain...