K3140 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 6 mΩ typ. - Low drive current - 4 V gate drive device can be driven from 5 V source Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source http://.. 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Note 3 Note 3 Note 1 Ratings 60 ±20 60 240 60 50 214 35 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Note 2 Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2SK3140 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 - - 1.0 - - |yfs| Ciss Coss 45 - - - - - - - - - - - - Typ - - - - 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max - ±0.1 10 2.5 7.5 12 - - - - - - - - - - - -...