PF0210 Datasheet | Hitachi Semiconductor

Features - High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK - Low input power: 0 d Bm ave. Typ for π /4-DQPSK - Simple bias circuit - High speed switching: 8 µs Typ Pin Arrangement - RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 4 5.5 20 - 30 to +100 - 40 to +110 Unit V A V m W °C °C Electrical Characteristics (Tc = 25°C) Analog Transmission Item Frequency Drain cutoff current Total efficiency(1) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Isolation Stability Symbol f I DS ηT(1) 2nd H.D. 3rd H.D. Min 824 - 30 - - Typ - - 34 - 55 - 60 2 9 - 45 Max 849 500 - - 30 - 40 3 - - 40 Unit MHz µA % d Bc d Bc - W d Bm - Pin = 3 d Bm, VDD = 12.5 V, VAPC = 4 V Pin = 3d Bm, VDD = 12.5 V, VAPC = 0.5 V Pin = 3 d Bm, VDD = 12.5 V, Pout ≤ 6 W, Output VSWR = 20:1 All phases Test...