PF0415A Datasheet | Hitachi Semiconductor

Features - - - - 3stage amplifier Small package : 0.2cc High efficiency : 45% Typ High speed switching : 0.9µsec Pin Arrangement - RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 11 3 6 20 - 30 to +100 - 30 to +100 3 Unit V A V m W °C °C W Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Pout (2) - tr, tf Min 1850 0.5 - 37 - - - 2.0 1.2 - - Typ - - - 45 - 45 - 45 1.5 2.4 1.5 - 40 0.9 Max 1910 3 100 - - 35 - 35 3 - - - 30 2 Unit MHz V µA % d Bc d Bc - W W d Bm µs Pin = 2 m W, VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 m W, VDD =4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 4.8 V, Pout = 1.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 6 V, Ids ≤ 0.9 A (only pulsed), Pout ≤ 1.8 W (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 11 V, VAPC = 0 V Pin = 2 m W, VDD = 4.8 V, Pout = 1.8 W (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C Test Condition Stability - No parasitic oscillation - 2 Pout vs.VAPC 40 30 20 10 Pout (d Bm) 0 - 10 - 20 - 30 - 40 - 50 0 0.5 1.0 1.5 Vdd = 4.8 V Pin = 3 d Bm Rg = R1 = 50 Ω Tc = 25°C 2.0 2.5 3.0 1850 MHz 1910 MHz Apc Voltage VAPC (V) ηT vs. VAPC 50 45 40 Efficiency ηT (%) 35 30 25 20 15 10 5 0 0 0.5 1.0 1.5 VAPC (V) 2.0 2.5 3.0 Vdd = 4.8 V Pin = 3 d Bm Rg = R1 = 50 Ω Tc = 25°C 1850 MHz 1910...