PF08107B
PF08107B is MOS FET Power Amplifier manufactured by Hitachi Semiconductor.
Features
- 2 in / 2 out dual band amplifier
- Simple external circuit including output matching circuit
- One power control pin with one band switch
- High gain 3stage amplifier : 0 d Bm input Typ
- Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ
- High efficiency : 50 % Typ at 35.0 d Bm for E-GSM
43 % Typ at 32.0 d Bm for DCS1800
Pin Arrangement
- RF-K-8
8 7G65 G G 12 G 34
1: Pin GSM 2: Vapc
3: Vdd1
4: Pout GSM 5: Pout DCS 6: Vdd2
7: Vctl
8: Pin DCS G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
Vdd 8
Supply current Vctl voltage
Idd GSM Idd DCS Vctl
3.5 2 4
Vapc voltage
Vapc
Input power
Pin 10 d Bm
Operating case temperature
Tc (op)
- 30 to +100
°C
Storage temperature
Tstg
- 30 to...
