Datasheet4U Logo Datasheet4U.com

CS220N04A8H - Silicon N-Channel Power MOSFET

General Description

switching performance and enhance the avalanche energy.

Key Features

  • l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS220N04A8H
Manufacturer Huajing Microelectronics
File Size 354.47 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS220N04A8H Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS220-12B SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS Central Semiconductor Corp
CS220-12D SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS Central Semiconductor Corp
CS220-12M SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS Central Semiconductor Corp
CS220-12N SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS Central Semiconductor Corp
CS220-12P SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS Central Semiconductor Corp

Other Datasheets by Huajing Microelectronics

Part Number Description
CS22J60AN Silicon N-Channel Power MOSFET
CS20J65A0-G Silicon N-Channel Power MOSFET
CS20J65AN Silicon N-Channel Power MOSFET
CS20J65FA9 Silicon N-Channel Power MOSFET
CS20N50A8H Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET CS220N04 A8H ○R General Description： CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier.