CS220N04A8H Datasheet | Huajing Microelectronics

Description ： CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the Ro HS standard. Features ： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138n C) l Low Reverse transfer capacitances(Typical:800p F) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS D a1 EAS a2 EAR a1 IAR a1 dv/dt a3 Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =...