GENERAL DESCRIPTION
： CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy. FEATURES
： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test APPLICATIONS
： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID I D a1 M VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 1
Huajing Microelectronics
