CS3N65A4H-G datasheet by Huajing Microelectronics.
| Part number | CS3N65A4H-G |
|---|---|
| Datasheet | CS3N65A4H-G-HuajingMicroelectronics.pdf |
| File Size | 345.16 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the...
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