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Silicon N-Channel Power MOSFET
CS3N65 A4H-G
○R
General Description：
VDSS
650 V
CS3N65 A4H-G the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.9 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤3.5Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS3N65A4H-G Datasheet
