CS3N65A4H-G Datasheet | Huajing Microelectronics

Description ： VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the Ro HS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤3.5Ω) l Low Gate Charge (Typical Data:11n C) l Low Reverse transfer capacitances(Typical:5p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =...