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Silicon N-Channel Power MOSFET
CS3N90F A9H
○R
General Description：
CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and
VDSS ID PD(TC=25℃) RDS(ON)Typ
900 3 30 4.7
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which accords
with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS3N90FA9H Datasheet
