CS4N60A4TDY - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS4N60A4TDY
Manufacturer	Huajing Microelectronics
File Size	350.95 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N60A4TDY Datasheet
Additional preview pages of the CS4N60A4TDY datasheet.

Product details

Description

CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω.

📁 Similar Datasheet

CS4N60 - VDMOS (EDN)
CS4N60F - N-CHANNEL MOSFET (ETC)
CS4N60FA9HD - Silicon N-Channel Power MOSFET (Huajing Discrete Devices)
CS4N65A3HD - Silicon N-Channel Power MOSFET (HUAJING)
CS4N65A4D - Silicon N-Channel Power MOSFET (HUAJING)
CS4N65A8RZ-G - Silicon N-Channel Power MOSFET (CR Micro)
CS4N65ARR - Silicon N-Channel Power MOSFET (CR Micro)
CS4N65FA9HD - Silicon N-Channel Power MOSFET (HUAJING)

Other Datasheets by Huajing Microelectronics

CS4N60A4HD - Silicon N-Channel Power MOSFET
CS4N60A4R - Silicon N-Channel Power MOSFET
CS4N60A3HD - Silicon N-Channel Power MOSFET
CS4N60A3R - Silicon N-Channel Power MOSFET
CS4N60A3TDY - Silicon N-Channel Power MOSFET
CS4N60A7HD - Silicon N-Channel Power MOSFET

Published: Dec 6, 2016 |