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CS5N70FA9 - Silicon N-Channel Power MOSFET

General Description

the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS5N70FA9
Manufacturer Huajing Microelectronics
File Size 828.59 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS5N70FA9 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS5N70F A9 ○R General Description： CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 5 32 1.8 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords withthe RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.