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CS60N04A4 - Silicon N-Channel Power MOSFET

General Description

CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ.

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Datasheet Details

Part number CS60N04A4
Manufacturer Huajing Microelectronics
File Size 194.58 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS60N04A4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Trench MOSFET CS60N04 A4 ○R General Description： CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ Applications： Power switch circuit of adaptor and charger.