CS60N04A4 - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS60N04A4
Manufacturer	Huajing Microelectronics
File Size	194.58 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS60N04A4 Datasheet
Additional preview pages of the CS60N04A4 datasheet.

Product details

Description

CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ.

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Published: Dec 6, 2016 |