Datasheet Summary
Silicon N-Channel Trench MOSFET
CS60N04 A4
○R
General Description：
CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
Features
： l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150°
VDSS
40 V
ID 60 A
PD(TC=25℃)
RDS(ON)Typ
8.5...