H1266
H1266 is PNP SILICON TRANSISTOR manufactured by Huashan.
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
- APPLICATIONS
General Purpose Application. Switching Application.
- ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg-
- Storage Temperature………………………… -55~150℃ Tj-
- Junction Temperature…………………………………150℃ PC-
- Collector Dissipation…………………………………400m W VCBO-
- Collector-Base Voltage………………………………-50V VCEO-
- Collector-Emitter Voltage……………………………-50V VEBO-
- Emitter-Base Voltage………………………………-5V IC-
- Collector Current………………………………………-150m A Ib-
- Base Current……………………………………………-50m A
TO-92
1―Emitter，E 2―Collector，C 3―Base，B
- ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-50
V IC=-100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V IC=-1m A, IB=0
BVEBO Emitter-Base Breakdown Voltage
-5
V...
