H128M
H128M is NPN SILICON TRANSISTOR manufactured by Huashan.
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
APPLICATIONS
Suitable For Low Voltage Large Current Drivers
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
PC Collector Dissipation
40 0m W
VCBO Collector-Base Voltage
20V
VCEO Collector-Emitter Voltage
15V
VEBO Emitter- Base Voltage
6. 5 V
IC Collector Current
1. 5A
TO-92
1 Emitter E 2 Collector C 3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO BVCEO BVEBO
HFE VCE(sat)
ICBO IEBO f T Cob Ron
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain Collector- Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance On Resistance
IC=50 A, IE=0 IC=1m A, IB=0 IE=50 A IC=0 VCE=1V, IC=100m A IC=500m A, IB=50m A A VCB=20V, IE=0 A VEB=6V, IC=0 VCE=5V, IC=50m A VCB=10V, IE=0 f=1
IB=1m...
