H1270
H1270 is PNP SIlicon Transistor manufactured by Huashan.
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
- CENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION
- ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg-
- Storage Temperature………………………… -55~150℃ Tj-
- Junction Temperature…………………………………150℃ PC-
- Collector Dissipation…………………………………500m W VCBO-
- Collector-Base Voltage………………………………-35V VCEO-
- Collector-Emitter Voltage……………………………-30V VEBO-
- Emitter-Base Voltage………………………………-5V IC-
- Collector Current……………………………………-500m A
TO-92
1―Emitter，E 2―Collector，C 3―Base，B
- ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
-100 n A VCB=-35V, IE=0
IEBO Emitter Cut-off Current
-100 n A VEB=-5V, IC=0
HFE（1） DC Current Gain
70 240 VCE=-1V, IC=-100m A
HFE（2）
25 VCE=-6V, IC=-400m A
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.25 V IC=-100m A, IB=-10m A
VBE Base-Emitter Voltage
-0.8 -1.0 V IC=-1A, IB=-100m A f T Current Gain-Bandwidth Product
200 MHz VCE=-6V, IC=-20m A
Cob Output Capacitance
13 p F VCB=-6V, IE=0，f=1MHz
- h FE Classification
O 70- 140
Y 120-...
