HGB290N10SL Datasheet | Hunteck

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial TO-263 100V N-Ch Power MOSFET RDS(on),typ RDS(on),typ TO-263 VGS=10V VGS=4.5V RDS(on),typ RDS(on),typ TO-220 VGS=10V VGS=4.5V ID (Sillicon Limited) 100 V 22.7 mΩ 27.7 mΩ 23.0 mΩ 28 mΩ 31 A TO-220 Drain Pin2 Gate Pin 1 Src Part Number Package Marking Pin3 HGB290N10SL TO-263 GB290N10SL HGP290N10SL TO-220 GP290N10SL Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.4m H, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Symbol RθJA RθJC Value Unit 31...