HGN115N15SL Datasheet | Hunteck

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial P-1 150V N-Ch Power MOSFET VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited) 150 8 9.4 73.9 60 V mΩ mΩ A A DFN5x6 Drain Gate Part Number HGN115N15SL Package Marking DFN5- 6 GN115N15SL Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25℃ L=0.4m H, TC=25℃ TC=25℃ - Pin 1 S S S G Src Value Unit 74 A ±20 320 m J -55 to150 ℃ Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Symbol RθJA...