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GM71VS17403CL - (GM71VS17403CL / GM71V17403C) 4M x 4-Bit CMOS DRAM

Description

The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit.

GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

Features

  • include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
  • 4,194,304 Words x 4 Bit Organization.
  • Extended Data Out Mode Capability.
  • Single Power Supply (3.3V +/- 0.3V).
  • Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC GM71V(S)17403C/CL-5 GM71V(S)17403C/CL-6 GM71V(S)17403C/CL-7 50 60 70 13 15 18 tRC 84 104 124 tHPC 20 25 30 Pin Configuration 24(26) SOJ VCC I/O1 I/O2 WE RAS NC A.

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Datasheet Details

Part number GM71VS17403CL
Manufacturer SK Hynix
File Size 127.26 KB
Description (GM71VS17403CL / GM71V17403C) 4M x 4-Bit CMOS DRAM
Datasheet download datasheet GM71VS17403CL Datasheet

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Full PDF Text Transcription

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GM71V17403C GM71VS17403CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17403C/CL offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V(S)17403C/CL to be packaged in a standard 300 mil 24(26) pin SOJ, and a standard 300 mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.
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