GM71VS64403AL Datasheet | SK Hynix

Description The GM71V(S)64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)64403A/AL offers Extended Data Out(EDO) Mode as a high speed access mode. Pin Configuration 32 SOJ / TSOP II VCC IO0 IO1 NC NC NC VCC /WE /RAS A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS IO3 IO2 NC NC VSS /CAS /OE A12 A11 A10 A9 A8 A7 A6 VSS Features - 16,777,216 Words x 4 Bit - Extended Data Out (EDO) Mode Capability - Fast Access Time & Cycle Time (Unit: ns) A1 A2 A3 A4 A5 VCC t RAC GM71V(S)64403A/AL-5 GM71V(S)64403A/AL-6 50 60 t AA 25 30 t CAC 13 15 t RC 84 104 t HPC 20 25 w w w . t a d h s a - Power dissipation - Active : 504m W/432m W(MAX) - Standby : 1.8 m W ( CMOS level : MAX ) 0.54m W ( L-Version : MAX) - EDO page mode capability - Access time : 50ns/60ns (max) - Refresh cycles - RAS only Refresh 8192 cycles/64 - Â (GM71V64403A) 8192 cycles/128- Â (GM71VS64403AL)(L_Version) - CBR & Hidden Refresh 4096 cycles/64 - Â (GM71V64403A) 4096 cycles/128 - Â (GM71VS64403AL)( L-Version ) - 4 variations of refresh -RAS-only refresh -CAS-before-RAS refresh -Hidden refresh -Self refresh (L-Version) - Single Power Supply of 3.3V+/-10 % with a built-in VBB generator - Battery Back Up Operation ( L-Version ) (Top View) t e e . u 4 m o c .. LG Semicon Pin Description Pin A0-A12 A0-A12 RAS CAS OE Function Address Inputs Refresh Address Inputs Row Address Strobe Column Address Strobe Output Enable Pin WE I/O0 - I/O3 VCC VSS NC GM71V64403A GM71VS64403AL Function Write Enable Data Input / Output Power (+3.3V) Ground No Connection Ordering...