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GM71VS65163CL - (GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM

Description

The GM71V(S)65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits.

The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user.

Features

  • include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)65163C/CL offers Extended Data Out(EDO) Mode as a high speed access mode. Pin Configuration 50 SOJ / TSOP-II VCC IO0 IO1 IO2 IO3 VCC IO4 IO5 IO6 IO7 NC VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS IO15 IO14 IO13 IO12 VSS IO11 IO10 IO9 IO8 NC.

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Datasheet Details

Part number GM71VS65163CL
Manufacturer SK Hynix
File Size 133.38 KB
Description (GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM
Datasheet download datasheet GM71VS65163CL Datasheet

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GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description The GM71V(S)65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)65163C/CL offers Extended Data Out(EDO) Mode as a high speed access mode.
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