H5AN4G4NAFR-xxC Datasheet | SK Hynix

4Gb DDR4 SDRAM 4Gb DDR4 SDRAM Lead-Free&Halogen-Free (Ro HS pliant) H5AN4G4NAFR-xx C H5AN4G8NAFR-xx C H5AN4G6NAFR-xx C - SK hynix reserves the right to change products or specifications without notice. Rev. 1.3 / Mar.2016 Revision History Revision No. History Draft Date Initial Release Dec. 2014 IDD Specification update Feb. 2015 Updated IDD specification (x16) Nov.2015 Updated JEDEC Specification Dec.2015 Changed Ordering Frequency Changed Speed Bin : 2666Mbps CL19(VK) Updated 2133Mbps (t CK(min) : 0.938ns->0.937ns) Mar.2016 Updated JEDEC Specification Remark Rev. 1.3 / Mar.2016 Description The H5AN4G4NAFR-xx C, H5AN4G8NAFR-xx C and H5AN4G6NAFR-xx C are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. Device Features and Ordering Information Features - VDD=VDDQ=1.2V +/- 0.06V - Two Termination States such as RTT_PARK...