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HY27US161G1M - 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Download the HY27US161G1M datasheet PDF. This datasheet also covers the HY27US081G1M variant, as both devices belong to the same 1gbit (128mx8bit / 64mx16bit) nand flash family and are provided as variant models within a single manufacturer datasheet.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

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Note: The manufacturer provides a single datasheet file (HY27US081G1M-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY27US161G1M
Manufacturer SK Hynix
File Size 312.09 KB
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Datasheet download datasheet HY27US161G1M Datasheet

Full PDF Text Transcription for HY27US161G1M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY27US161G1M. For precise diagrams, and layout, please refer to the original PDF.

Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and ...

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81G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1 Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufa

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