Datasheet Summary
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27US081G1M HY27US161G1M
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Features
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout patibility for all densities FAST BLOCK ERASE
- Block erase time: 2ms (Typ.) STATUS REGISTER...