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HY57V121620LT - Synchronous DRAM

Download the HY57V121620LT datasheet PDF. This datasheet also covers the HY57V121620T variant, as both devices belong to the same synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V121620 is organized as 4banks of 8,388,608x16.

Key Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
  • Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
  • - 1,.

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Note: The manufacturer provides a single datasheet file (HY57V121620T_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HY57V121620LT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY57V121620LT. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main mem...

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0 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

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