HY57V161610D-I - 2 Banks x 512K x 16 Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V161610D-I
Manufacturer	Hynix Semiconductor
File Size	161.62 KB
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Datasheet	HY57V161610D-I Datasheet
Additional preview pages of the HY57V161610D-I datasheet.

Product details

Description

THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range.

Features

Single 3.0V to 3.6V power supplyNote1).
Auto refresh and self refresh.
All device pins are compatible with LVTTL interface.
4096 refresh cycles / 64ms.
JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch.
All inputs and outputs referenced to positive edge of system clock.
Data mask function by UDQM/LDQM.
Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst - 1, 2, 4 and 8 for I.

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Other Datasheets by Hynix Semiconductor

HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM
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Published: Oct 15, 2015 |