HY57V161610D-I Overview
THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock.
HY57V161610D-I Key Features
- Single 3.0V to 3.6V power supplyNote1)
- Auto refresh and self refresh
- All device pins are patible with LVTTL interface
- 4096 refresh cycles / 64ms
- JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
- All inputs and outputs referenced to positive edge of system clock
- Data mask function by UDQM/LDQM
- Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
HY57V161610D-I Applications
- Single 3.0V to 3.6V power supplyNote1)