HY57V161610D Overview
THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock.
HY57V161610D Key Features
- Single 3.0V to 3.6V power supply
- Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- All inputs and outputs referenced to positive edge of system clock
- 1, 2, 4 and 8 for Interleave Burst
- Programmable C A S Latency ; 1, 2, 3 Clocks