HY57V161610ETP-I - 2 Banks x 512K x 16 Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V161610ETP-I
Manufacturer	Hynix Semiconductor
File Size	215.67 KB
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Datasheet	HY57V161610ETP-I Datasheet
Additional preview pages of the HY57V161610ETP-I datasheet.

Product details

Description

THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth.

Features

Single 3.0V to 3.6V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM/LDQM Internal two banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Fu.

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Other Datasheets by Hynix Semiconductor

HY57V161610ET-I - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610E - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610D-I - 2 Banks x 512K x 16 Bit Synchronous DRAM
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Published: Apr 2, 2005 |