HY57V161610ETP-I Overview
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation referenced to a positive edge clock.
HY57V161610ETP-I Key Features
- Single 3.0V to 3.6V power supply All device pins are patible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II wi
- Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst Programmable CAS Latency ; 1, 2, 3 Clocks Pb-free Package