HY57V161610ET-I Overview
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation referenced to a positive edge clock.
HY57V161610ET-I Key Features
- Single 3.0V to 3.6V power supply
- All device pins are patible with LVTTL interface
- JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
- All inputs and outputs referenced to positive edge of system clock
- Data mask function by UDQM/LDQM
- Auto refresh and self refresh
- 4096 refresh cycles / 64ms
- Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
HY57V161610ET-I Applications
- Single 3.0V to 3.6V power supply
- All device pins are patible with LVTTL interface
- JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
- All inputs and outputs referenced to positive edge of system clock