HY57V56820CT - 4 Banks x 8M x 8Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V56820CT
Manufacturer	Hynix Semiconductor
File Size	108.92 KB
Description	4 Banks x 8M x 8Bit Synchronous DRAM
Datasheet	HY57V56820CT Datasheet
Additional preview pages of the HY57V56820CT datasheet.

Product details

Description

The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

📁 Similar Datasheet

HY57V561620BLT-H - DRAM (Pioneer)
HY57V28420BLT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V28420BT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V641620FTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620LTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620STP - Synchronous DRAM Memory 64Mbit (Hynix)
HY5-P - Current Transducers HY 5 to 25-P (LEM)
HY50-P - Current Transducer HY 50-P (LEM)

Other Datasheets by Hynix Semiconductor

HY57V56820CLT - 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V56820BLT - 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V56820BT - 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V561620 - 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BLT-I - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BT-I - 4 Banks x 4M x 16Bit Synchronous DRAM

Published: Mar 16, 2007 |