HY5DU12822DTP - 512Mb DDR SDRAM

This page provides the datasheet information for the HY5DU12822DTP, a member of the HY5DU121622DTP 512Mb DDR SDRAM family.

Product Overview

Hynix Semiconductor

Part number	HY5DU12822DTP
Manufacturer	Hynix Semiconductor
File Size	271.52 KB
Description	512Mb DDR SDRAM
Datasheet	HY5DU12822DTP Datasheet
Additional preview pages of the HY5DU12822DTP datasheet.

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS.

Other Datasheets by Hynix Semiconductor

Published: Dec 21, 2010 |