HY5DU281622ET
Overview
The Hynix HY5DU281622ET is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which require high densities and high bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.
- 2.8V +/- 0.1V VDD and VDDQ power supply supports 400/375/350/333/300MHz 2.5V +/- 5% VDD and VDDQ power supply supports 275/250/200/166MHz All inputs and outputs are compatible with SSTL_2 interface JEDEC Standard 400 mil x 875 mil 66 Pin TSOP II, with 0.65mm pin pitch Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (UDQS,LDQS) Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) Data(DQ) and Write masks(DM) la
