HY5DU561622ELTP - (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

This page provides the datasheet information for the HY5DU561622ELTP, a member of the HY5DU56822E (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM family.

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Hynix Semiconductor

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Datasheet Details

Part number	HY5DU561622ELTP
Manufacturer	Hynix Semiconductor
File Size	292.14 KB
Description	(HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
Datasheet	HY5DU561622ELTP Datasheet
Additional preview pages of the HY5DU561622ELTP datasheet.

HY5DU561622ELTP Product details

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data.

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Other Datasheets by Hynix Semiconductor

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Published: Mar 7, 2007 |