HY5DU56422DT - (HY5DU56xx22DT) 256Mb DDR SDRAM

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Hynix Semiconductor

Part number	HY5DU56422DT
Manufacturer	Hynix Semiconductor
File Size	268.63 KB
Description	(HY5DU56xx22DT) 256Mb DDR SDRAM
Datasheet	HY5DU56422DT Datasheet
Additional preview pages of the HY5DU56422DT datasheet.

and is subject to change without notice.

ES VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +/- 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation.
All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable CAS latency 2/2.5 (DDR200, 266, 333) and 3 (DDR400) supported Programmable burst length 2/4/8 with both sequential and interleave mode Internal four bank operat.

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Published: Nov 7, 2006 |