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HY5DU56422LT Datasheet

Manufacturer: SK Hynix

This datasheet includes multiple variants, all published together in a single manufacturer document.

HY5DU56422LT datasheet preview

Datasheet Details

Part number HY5DU56422LT
Datasheet HY5DU56422LT HY5DU561622AT Datasheet (PDF)
File Size 529.85 KB
Manufacturer SK Hynix
Description (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
HY5DU56422LT page 2 HY5DU56422LT page 3

HY5DU56422LT Overview

and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU56422LT Key Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are patible with SSTL_2 interface Fully differential clock inputs (CK,
  • data transaction aligned to bidirectional data strobe (DQS)
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Progr
  • Internal four bank operations with single pulsed /RAS x16 device has two bytewide data strobes (UDQS, . LDQS) per each x
  • tRAS Lock-out function supported Data outputs on DQS edges when read (edged DQ)
  • Auto refresh and Self refresh supported Data inputs on DQS centers when write (centered DQ)
  • 8192 refresh cycles / 64ms On chip DLL align DQ and DQS transition with CK transition DM mask write data-in at the both
  • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch Full and Half strength driver option controlled by EMRS
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HY5DU56422LT (HY5DU56xx22DT) 256Mb DDR SDRAM
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HY5DU56422AT (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
HY5DU56422BT-D4 (HY5DU56x22BT-D4x) 256M-P DDR SDRAM
HY5DU56422BT-D43 (HY5DU56x22BT-D4x) 256M-P DDR SDRAM
HY5DU56422CF (HY5DU56xxxC(L)F) 256M DDR SDRAM
HY5DU56422CT (HY5DU56xx22CT) 256M-P DDR SDRAM
HY5DU56422DT (HY5DU56xx22DT) 256Mb DDR SDRAM
HY5DU56422DTP (HY5DU56x22DTP) 256M DDR SDRAM
HY5DU56422T (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM

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