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HY5DU56422DTP - (HY5DU56x22DTP) 256M DDR SDRAM

General Description

and is subject to change without notice.

Hynix semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL ali.

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Full PDF Text Transcription for HY5DU56422DTP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY5DU56422DTP. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY5DU56422D(L)TP HY5DU56822D(L)TP HY5DU561622D(L)TP 256M DDR SDRAM HY5DU56422D(L)TP HY5DU56822D(L)TP HY5DU561622D(L)TP This document is a general prod...

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)TP HY5DU56822D(L)TP HY5DU561622D(L)TP This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 /May 2004 www.DataSheet4U.com HY5DU56422D(L)TP HY5DU56822D(L)TP HY5DU561622D(L)TP DESCRIPTION PRELIMINARY The Hynix HY5DU56422D(L)TP, HY5DU56822D(L)TP and HY5DU561622(L)TP are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

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