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HY5DU56822AT

HY5DU56822AT is (HY5DU56xx22A(L)T) 256M-S DDR SDRAM manufactured by SK Hynix.
HY5DU56822AT datasheet preview

HY5DU56822AT Datasheet

Part number HY5DU56822AT
Datasheet HY5DU56822AT / HY5DU561622AT Datasheet PDF (Download)
File Size 529.85 KB
Manufacturer SK Hynix
Description (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
HY5DU56822AT page 2 HY5DU56822AT page 3

HY5DU56822AT Overview

and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU56822AT Key Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are patible with SSTL_2 interface Fully differential clock inputs (CK,
  • data transaction aligned to bidirectional data strobe (DQS)
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Progr
  • Internal four bank operations with single pulsed /RAS x16 device has two bytewide data strobes (UDQS, . LDQS) per each x
  • tRAS Lock-out function supported Data outputs on DQS edges when read (edged DQ)
  • Auto refresh and Self refresh supported Data inputs on DQS centers when write (centered DQ)
  • 8192 refresh cycles / 64ms On chip DLL align DQ and DQS transition with CK transition DM mask write data-in at the both
  • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch Full and Half strength driver option controlled by EMRS

Related Datasheets

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HY5DU56822BT-D43 (HY5DU56x22BT-D4x) 256M-P DDR SDRAM Hynix Semiconductor
HY5DU56822CF (HY5DU56xxxC(L)F) 256M DDR SDRAM Hynix Semiconductor

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