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HY5DU56822T - (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM

General Description

and is subject to change without notice.

Hynix Semiconductor Inc.

does not assume any responsibility for use of circuits described.

Key Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL ali.

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Datasheet Details

Part number HY5DU56822T
Manufacturer SK Hynix
File Size 370.15 KB
Description (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM
Datasheet download datasheet HY5DU56822T Datasheet

Full PDF Text Transcription for HY5DU56822T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY5DU56822T. For precise diagrams, and layout, please refer to the original PDF.

m o .c U 4 t e e h S a at .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T m 2nd 256M DDR SDRAM o .c U 4 t e e h S a t a .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5D...

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M o .c U 4 t e e h S a t a .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.7/May. 02 1 m o .c U 4 t e e h S a at .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T Revision History 1. Revision 0.4 (Nov. 01) 1) Removed ‘Preliminary’ 2. Revision 0.5 (Dec. 01) 1) Separated ‘Function description’ and ‘Timing diagram’ parts - These are available in Web site (www.hynix.com) 3. Revision 0.6 (May. 02) 1) I

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