HY5RS123235BFP
Description
The Hynix HY5RS123235 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. The Hynix HY5RS123235 is internally configured as a eight-bank DRAM.
Key Features
- 2.05V/ 1.8V power supply supports (For more detail, Please see the Table 12 on page
- Single ended READ Strobe (RDQS) per byte
- Single ended WRITE Strobe (WDQS) per byte
- Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
- On Die Termination
- Output Driver Strength adjustment by EMRS
- Calibrated output driver
- Differential clock inputs (CK and CK#)
- mands entered on each positive CK edge
- RDQS edge-aligned with data for READ; with WDQS center-aligned with data for WRITE
